The results on thin gold nanowires obtained in situ in a scanning electron microscope (SEM) are presented. The wires were prepared using electron beam lithography with a width around 500 nm and a length of several urn. Electromigration tests were carried out at room temperature with a current density above 10~8 A/cm~2. Observation of the nucleation and development of voids and hillocks during electrical stressing of the wires were carried out in real-time. The I/V-characteristics and the development of the resistance versus time can be directly assigned to morphological changes in the nanowires. Heating effects of the wire during the experiment have been successfully separated from the morphological influence on the resistance.
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机译：介绍了在扫描电子显微镜（SEM）中原位获得的金纳米细线的结果。使用电子束光刻法制备导线，该导线的宽度约为500 nm，长度为几um。电迁移测试在室温下进行，电流密度高于10〜8 A / cm〜2。实时观察导线在电应力过程中空隙和小丘的形核和发展。 I / V特性以及电阻随时间的变化可以直接指定给纳米线的形态变化。已经成功地将电线在实验过程中的加热效果与对电阻的形态影响分开了。
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