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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part A. Defect and Diffusion Forum >Effect of Purity on Dislocation-induced Relaxations in Molybdenum Single Crystals
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Effect of Purity on Dislocation-induced Relaxations in Molybdenum Single Crystals

机译:纯度对钼单晶中位错诱导的弛豫的影响

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Dislocation-induced relaxations in different molybdenum single crystals were investigated by means of low-frequency internal friction measurements in the temperature range of20-600 K. The results indicated that the appearance of the dislocation-induced relaxations strongly depends on the purity of the molybdenum, although the intrinsic dislocation relaxations appeared at about 100 K and 450 K in the high-purity molybdenum. The molybdenum containing a small amount of carbon did not exhibit the intrinsic dislocation relaxations but rather revealed a modulus increase due to the dislocation pinning caused by the dissolved carbon. When the molybdenum containing a small amount of carbon was annealed up to 700 K, a new relaxation peak appeared at about 450 K. The activation process for this relaxation indicated that it could be attributed to the relaxation due to a carbon-dislocation interaction. In addition, it was shown that the dislocation-induced relaxations in medium-purity molybdenum were small, which was attributed to the residual substitutional impurities in the molybdenum.
机译:通过在20-600 K的温度范围内进行低频内摩擦测量,研究了不同钼单晶中位错诱导的弛豫。结果表明,位错诱导的弛豫的出现在很大程度上取决于钼的纯度,尽管在高纯度钼中固有位错弛豫出现在大约100 K和450 K处。含有少量碳的钼没有表现出固有的位错弛豫,而是由于由溶解的碳引起的位错钉扎而显示出模量增加。当将含碳量少的钼退火至700 K时,在约450 K处出现一个新的弛豫峰。该弛豫的活化过程表明,这可能归因于碳位错相互作用。另外,显示了由位错引起的中等纯度钼的弛豫很小,这归因于钼中残留的取代杂质。

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