首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part A. Defect and Diffusion Forum >Stress Relaxation Mechanisms during Cd2iNis Intermetallic Growth under High Hydrostatic Pressure
【24h】

Stress Relaxation Mechanisms during Cd2iNis Intermetallic Growth under High Hydrostatic Pressure

机译:高静水压力下Cd2iNis金属间化合物生长过程中的应力松弛机理

获取原文
获取原文并翻译 | 示例
           

摘要

Stress relaxation processes accompanying intermetallic growth during reactive diffusion between Cd and Ni have been studied by the methods of optical and scanning electron microscopy, provided with X-ray microanalysis. The experiments were carried out with the two-layer Cd-Ni samples at 250 and 280°C under hydrostatic pressures 350-900 MPa. The observed processes have been compared with those occurred at low pressures to demonstrate that the mechanisms of stress relaxation and thus the kinetics of intermetallic growth essentially depend on applied hydrostatic pressure. New mechanisms of stress relaxation were found, such as Cd extrusion and Cd whisker growth, which accompanied formation of Cd2iNi5 compound. It is shown, that the whisker growth is more probable at lower temperatures when the grain size is smaller, and the stress gradient, which support a driving force for whisker formation, is higher. An atomic mechanism for whisker growth, based on diffusion climbing of dislocation loops produced by Bardeen-Herring source for building new atomic layers, has been discussed.
机译:通过光学和扫描电子显微镜的方法,以及X射线显微分析,研究了Cd和Ni之间的反应扩散过程中伴随金属间生长的应力松弛过程。用两层Cd-Ni样品在250和280°C的静水压350-900 MPa下进行实验。将观察到的过程与在低压下发生的过程进行了比较,以证明应力松弛的机制以及金属间化合物生长的动力学基本上取决于施加的静水压力。发现了应力松弛的新机制,例如Cd挤压和Cd晶须生长,伴随着Cd2iNi5化合物的形成。结果表明,当晶粒尺寸较小时,晶须生长在较低的温度下更有可能,而支撑晶须形成驱动力的应力梯度较高。讨论了晶须生长的原子机理,该机理基于Bardeen-Herring源产生的位错环的扩散爬升,用于构建新的原子层。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号