Diffusion of Implanted Metals in Tantalum Siiicide

摘要

In this paper we presented the diffusion behavior of 39K, 40Ca, 48Ti, 5IV, 52Cr and 55Mn ion implanted into 500 ran TaSi2 layers co-sputtered on silicon. The samples were annealed at temperatures ranging from 300-1000°C for 30 minutes, The transition elements studied (48Ti, 51V, 52Cr and 55Mn) show very similar diffusion behavior. SIMS profiles show no movement for these transition metal elements for the 300 and 500°C annealed samples, some diffusion at 700°C, and significant diffusion at 900 and 1000°C For Alkali or alkaline metals such as 38K and 40Ca, SIMS depth profiles show more limited. Ti, V, Cr, and Mn diffuse faster than K and Ca in this siiicide.