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Positron Lifetime in Deformed AISiio.9Mgo.17Sro.oe Alloys

机译:AISiio.9Mgo.17Sro.oe变形合金的正电子寿命

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摘要

Positron annihilation lifetime spectroscopy (PALS) is one of the nuclear techniques used in material science. (PALT) measurements are used to study the behaviour of the defect concentration in a set of AlSi10.9Mgo.17Sro.06 alloys. It has been shown that positrons can become trapped at imperfect locations in solids, and that their mean lifetime can be influenced by changes in the concentration of such defects. No changes have been observed in the mean lifetime values following saturation of tile defect concentration. The mean lifetime and trapping rates were studied for samples deformed up to 34.9 %. The concentrations of defects range vary from 5.194xlO15 to 1.934×10~18 cm~(-3) for thickness reductions of 2.2 to 34.9 %. The range of the dislocation density varies from 1.465x 108 to 5.454 ×10~10cm/cm~3 over the same range of deformations.
机译:正电子an没寿命谱(PALS)是材料科学中使用的核技术之一。 (PALT)测量用于研究一组AlSi10.9Mgo.17Sro.06合金中缺陷浓度的行为。已经表明,正电子会被困在固体中的不完美位置,并且它们的平均寿命会受到此类缺陷浓度变化的影响。瓷砖缺陷浓度饱和后,平均寿命值未见变化。研究了变形高达34.9%的样品的平均寿命和捕获率。缺陷浓度范围从5.194x1015到1.934×10〜18 cm〜(-3)不等,厚度减小了2.2%至34.9%。在相同的变形范围内,位错密度的范围从1.465x 108到5.454×10〜10cm / cm〜3。

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