High Pressure Treatment of Semiconductor-Metal Heterophase Structures

摘要

Semiconductor-metal (SC-M) phase transition was investigated in lead chalcogenides PbX (X = Te, Se, S) at pressures up to 9 GPa. In vicinity of the SC-M phase transition the relation between thermoelectric power S and electrical resistance ρ was found to agree with results of calculations according to the heterophase model with variable configuration of phase inclusions.