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Spin relaxation mechanism of hopping transport in a 2D asymmetric quantum dot array

机译:二维非对称量子点阵列中跳跃传输的自旋弛豫机理

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摘要

Spin relaxation is studied in the hopping conduction mode in 2D arrays of quantum dots (QDs) with structural asymmetry. It is shown that the absence of the "up-down" symmetry in a QD leads to the emergence of a new spin relaxation mechanism in tunneling in a 2D QD array. The difference in spin relaxation mechanisms for symmetric and asymmetric QDs is demonstrated on the basis of theoretical analysis of an elementary event (jump between two tunnel-coupled dots). It is shown that spin flip during tunneling between QDs is the main spin relaxation mechanism in the transport in dense arrays of QDs in Ge placed in weak (1-10 T) magnetic fields.
机译:在具有结构不对称性的量子点(QD)的二维阵列中,以跳跃传导模式研究自旋弛豫。结果表明,在QD中不存在“上下”对称性会导致在2D QD阵列中隧穿中出现新的自旋弛豫机制。在对基本事件(两个隧道耦合点之间的跳跃)进行理论分析的基础上,证明了对称和非对称量子点自旋弛豫机制的差异。结果表明,在量子点之间隧穿期间的自旋翻转是在放置在弱(1-10 T)磁场中的Ge中的量子点密集阵列中传输的主要自旋弛豫机制。

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