首页> 外文期刊>Journal of Experimental and Theoretical Physics >Periodic Landau-Zener problem in long-range migration
【24h】

Periodic Landau-Zener problem in long-range migration

机译:长期迁徙中的周期性Landau-Zener问题

获取原文
获取原文并翻译 | 示例
           

摘要

From studies of radiation effects in semiconductors at low temperatures, it is known that an interstitial atom migrates over a distance of up to 1000 angstrom (Watkins effect [1]). The interpretation of this effect is based on the inversion of potential energy curves of an interstitial atom in semiconductors when it changes its charge. At low temperatures, a cascade of radiationless transitions can occur between the ground and excited states of a relocalized electron, which leads to the coherent tunneling of the interstitial atom through the lattice. The description of this effect using the scattering matrix S leads to the dispersion law and to an equation for the effective mass of such a quasiparticle called an inverson.
机译:通过研究低温下半导体中的辐射效应,可以知道间隙原子迁移的距离高达1000埃(沃特金斯效应[1])。对这种效应的解释是基于间隙原子在半导体中改变其电荷时其势能曲线的倒置。在低温下,在重新定位的电子的基态和激发态之间可能会发生级联的无辐射跃迁,这将导致间隙原子穿过晶格的相干隧穿。使用散射矩阵S对这种效应的描述导致了色散定律,并得出了这种准粒子的有效质量的方程,称为逆子。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号