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High-Field Magnetoresistance and Hall Effect in Bi_2Sr_2CuO_x Single Crystals

机译:Bi_2Sr_2CuO_x单晶的高场磁阻和霍尔效应

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摘要

We investigated the in-plane magnetoresistance and the Hall effect of High-quality Bi_2Sr_2CuO_x single crystals with T_c (midpoint) = 3.7-9.6 K in dc magnetic fields up to 23 T. For T < 10 K, the crystals show the classical positive magnetoresistance. Starting at T ≈ 14 K, an anomalous negative magnetoresistance appears at low magnetic fields; for T ≥ 40 K, the magnetoresistance is negative in the whole studied range of magnetic fields. Temperature and magnetic field dependences of the negative-magnetoresistance single crystals are qualitatively consistent with the electron interaction theory developed for simple semiconductors and disordered metals. As is observed in other cuprate superconductors, the Hall resistivity is negative in the mixed state and changes its sign with increasing field. The linear T-dependence of cotθ_H for the Hall angle in the normal state closely resembles that of the normal-state resistivity as expected for a Fermi liquid picture.
机译:我们研究了高达23 T的直流磁场中T_c(中点)= 3.7-9.6 K的高质量Bi_2Sr_2CuO_x单晶的面内磁阻和霍尔效应。对于T <10 K,晶体显示出经典的正磁阻。从T≈14 K开始,在低磁场下会出现异常的负磁阻。对于T≥40 K,在整个研究磁场范围内磁阻为负。负磁阻单晶的温度和磁场依赖性与定性于简单半导体和无序金属的电子相互作用理论在质量上是一致的。正如在其他铜酸盐超导体中所观察到的那样,霍尔电阻率在混合状态下为负,并随着电场的增加而改变其符号。正常状态下,霍尔角对cotθ_H的线性T相关性与费米液态图片所期望的与正常状态的电阻率非常相似。

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