INVESTIGATION OF THE PHOTOELECTRIC CHARACTERISTICS OF PHOTODIODE STRUCTURES WITH SILICON-BASED POTENTIAL BARRIERS

摘要

Based on silicon with a base region thickness of 300 μm, phototransforming Au-nSi-Au structures with potential barriers are prepared. The diode structures obtained possess high photosensitivity in the spectral region 0.9-1.1 μm at low illumination intensities of 10 lux (up to 5 A/W). Based on investigations of the photoelectric characteristics, it has been established that the Au-nSi-Au structures in the range of temperatures from room temperature to 40℃ at low working voltages (0.1-0.2 V) are distinguished by the weak temperature dependence of photocurrents. In principle, in the spectral range 0.7-1.1 μm the Au-nSi-Au structures obtained can easily replace both gallium arsenide and classical silicon photodiodes with one rectifying junction in optoelectronic devices.