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首页> 外文期刊>Journal of Electronic Materials >Non-Equilibrium Electron Distributions and Electron-Longitudinal Optical Phonon Scattering Rates in Wurtzite GaN
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Non-Equilibrium Electron Distributions and Electron-Longitudinal Optical Phonon Scattering Rates in Wurtzite GaN

机译:纤锌矿型GaN中的非平衡电子分布和电子纵向光学声子散射速率

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摘要

Non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN have been studied by subpicosecond time-resolved Raman spectroscopy. Our experimental results show that for electron densities n ≥ 5 × 10↑(17)cm↑(-3), the non-equilibrium electron distributions in wurtzite GaN can be very well described by Fermi-Dirac distribution functions with the effective electron temperature much higher than the lattice temperature. In addition, we find that the total electron-longitudinal optical phonon scattering rate in GaN is about one order of magnitude larger than that in GaAs. We attribute this enormous increase in the electron-longitudinal optical phonon scattering rate to the much larger ionicity in GaN.
机译:通过亚皮秒时间分辨拉曼光谱研究了纤锌矿型GaN中的非平衡电子分布和电子纵向光子散射速率。我们的实验结果表明,对于电子密度n≥5×10↑(17)cm↑(-3),纤锌矿GaN中的非平衡电子分布可以用费米-狄拉克分布函数很好地描述,而有效电子温度要高得多。高于晶格温度。此外,我们发现GaN中的总电子纵向光学声子散射速率比GaAs中的大约一个数量级。我们将电子-纵向光学声子散射速率的极大提高归因于GaN中更大的离子性。

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