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Effect of Migration and Condensation of Pre-existing Voids on Increase in Bump Resistance of Flip Chips on Flexible Substrates during Electromigration

机译:预先存在的空隙的迁移和凝聚对电迁移过程中柔性基板上倒装芯片的抗突点增加的影响

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摘要

In Pb-free solder joints formed by reflowing a bump of solder paste, voids are formed within the solder due to the residue of flux in the reflow process. These voids migrate toward the cathode contact during electromigration under current stressing. Accompanying the electromigration, resistance jumps of a few 100 m(OMEGA) were observed. It was postulated that a jump occurs when a void touches the cathode contact. This study investigated the effect of the void migration and condensation on the change in bump resistance using three-dimensional (3D) simulations and finite element analysis. It was found that there was negligible change in bump resistance during void migration towards the high-current-density region before touching the cathode contact opening. When a small void condensed on the contact opening and depleted 18.4percent of the area, the bump resistance increased only 0.4 m(OMEGA). Even when a large void depleted 81.6percent of the opening, the increase in bump resistance was 3.3 m(OMEGA). These values are approximately two orders of magnitude smaller than those reported in the literature for the change in resistance due to void migration in flip chips on flexible substrates. We conclude that the reported change in resistance was most likely that of the Al or Cu interconnection in the flip-chip samples.
机译:在通过回流焊膏凸点形成的无铅焊点中,由于回流过程中助焊剂的残留,在焊剂中形成了空隙。这些空隙在电流应力下的电迁移过程中向阴极触点迁移。伴随电迁移,观察到了几百m(OMEGA)的电阻跳跃。假定当空隙接触阴极触点时会发生跳变。这项研究使用三维(3D)模拟和有限元分析研究了空穴迁移和凝结对凸点电阻变化的影响。发现在接触阴极接触开口之前,空隙向高电流密度区域迁移期间的凸点电阻的变化可忽略不计。当小的空隙凝结在触点开口上并耗尽面积的18.4%时,凸点电阻仅增加0.4 m(OMEGA)。即使大的空隙耗尽了开口的81.6%,凸点电阻的增加也达到3.3 m(OMEGA)。这些值比由于柔性基板上的倒装芯片中的空隙迁移引起的电阻变化而在文献中报道的电阻值约小两个数量级。我们得出结论,在倒装芯片样品中,报告的电阻变化很可能是Al或Cu互连的电阻变化。

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