Low-Resistance Polysilicon Process in Contact Application for High Density Devices

摘要

For the lowest resistance, it is required to have the epitaxial silicon contact between the silicon plug and the substrate and good step coverage at the high aspect-ratio contact holes, simultaneously. In this work, a double polysilicon (DPS) deposition technique was proposed for the requirements. The first, thin silicon layer is deposited in a single-wafer process chamber with an in-situ H_2-RTP (rapid thermal process) treatment for the epitaxial contact, and the second silicon layer is formed in a batch-type furnace for good step coverage. From chain resistance, Kelvin R_c, and current-voltage (I-V) measurement, the DPS process meets both low resistance and good uniformity, so that it suggests a breakthrough in the small-sized, semiconductor device applicaiton.