Ti-O Direct-Current-Sintered Bodies and Their Use for Sputter Deposition of TiO Thin Films: Fabrication and Characterization

摘要

Ti-50at.(percent)O and Ti-40at.(percent)O sintered bodies were fabricated by direct-current sintering using Ti and TiO_(2) powders as starting materials. Their microstructures were investigated by x-ray diffraction and optical microscopy. Ti-O thin films were deposited on glass substrates by radiofrequency (RF) magnetron sputtering using a Ti-50at.(percent)O or Ti-40at.(percent)O sintered body as a sputtering target. A crystalline TiO thin film was obtained using a Ti-40at.(percent)O sputtering target, while an amorphous or Ti_(6)O_(11) thin film was obtained using a Ti-50at.(percent)O sputtering target. The electric resistivity of the TiO thin films was 450 (mu)(OMEGA) cm to 1000 (mu)(OMEGA) cm depending on their thickness.