High-Operating-Temperature MWIR Detector Diodes

摘要

The high-operating-temperature (HOT) midwave infrared (MWIR) n-on-p detector has been pursued using the high-density vertically integrated photodiode (HDVIP~(~R)) architecture. In this device, arsenic-doped HgCdTe grown by liquid-phase epitaxy (LPE) is used, passivated on both surfaces with interdiffused CdTe. Dark current densities on these diodes as low as 2.5 mA/cm~(2) normalized to a 5 (mu)m cutoff at 250 K have been demonstrated. 1/f noise at 1 Hz, measured at 250 K, is found to be 6 X 10~(-11) A/rHz-cm measured on a cutoff of 4.43 (mu)m. These results agree with the theoretical predictions for the devices made.