Characteristics of 6H-Silicon Carbide PIN Diodes Prototyping by Laser Doping

摘要

Silicon carbide PIN diodes have been fabricated using a direct-write laser-doping technique that reduces defect generation compared to the conventional ion-implantation technique.Nitrogen and aluminum were successfully incorporated into SiC as n-type and p-type dopants,respectively.Rutherford backscat-tering studies were conducted to compare the lattice defect generation by the laser-doping and ion-implantation techniques.No amorphization was observed in laser-doped samples,eliminating the need for high-temperature annealing.The current-voltage(I-V)and capacitance-voltage(C-V)characteristics of the PIN diodes were also investigated.The silicon carbide diodes are intended for high-temperature and high-voltage power electronics applications.