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Role of Relaxation on the Giant Permittivity and Electrical Properties of CaCu3Ti4O12 Ceramics

机译:弛豫对CaCu3Ti4O12陶瓷的介电常数和电性能的影响

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摘要

CaCu3Ti4O12 (CCTO) ceramics were synthesized under various sintering conditions to investigate the role of relaxation on permittivity and electrical properties. Two relaxation processes that respectively related to grain and to domain boundary at a temperature as low as 223 K were fitted according to the Cole-Cole theory. The results indicate that both relaxations largely account for the giant permittivity of CCTO ceramics. Moreover, the relaxation behaviors of grain and of the grain boundary can be processed via impedance plots that vary from 113 K to 473 K. It is shown that longer sintering duration leads to lower resistance of grain and of grain boundary: e.g., from 3200 Omega to 810 Omega and 1.76 M Omega to 0.48 M Omega, respectively. The activation energy related to grain-boundary relaxation drops from 1.14 eV to 0.80 eV, while the value of grain stays unchanged at about 0.11 eV. The Schottky barrier of the CCTO sample decreases from 0.65 eV to 0.57 eV. It is also proposed that the nonlinearity of current-voltage property for CCTO ceramics may be strongly related to the relaxation processes of grain boundaries.
机译:在各种烧结条件下合成了CaCu3Ti4O12(CCTO)陶瓷,以研究弛豫对介电常数和电性能的作用。根据Cole-Cole理论,在低至223 K的温度下分别拟合了两个与晶粒和畴边界有关的弛豫过程。结果表明,两种弛豫在很大程度上都解释了CCTO陶瓷的巨大介电常数。此外,可以通过从113 K到473 K变化的阻抗图来处理晶粒和晶界的松弛行为。结果表明,较长的烧结时间会导致较低的晶粒和晶界电阻:例如,从3200 Omega分别为810 Omega和1.76 M Omega至0.48 M Omega。与晶界弛豫有关的活化能从1.14 eV下降到0.80 eV,而晶粒的值则保持在约0.11 eV不变。 CCTO样品的肖特基势垒从0.65 eV降低到0.57 eV。还提出CCTO陶瓷电流-电压特性的非线性可能与晶界的弛豫过程密切相关。

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