Migration Effect on Semiconductor Surface for Narrow-Stripe Selective MOVPE

摘要

A novel method for deriving the migration length (L.) on asemiconductor surface is discussed. L_m is the most importantparameter but it has been precisely investigated for narrow-stripeselective-MOVPE. L. can be deduced from the relationship between the(111)B-facet length and the (100)-facet length in the edge-growthregion formed at the side of SiO, masks. The two lengths have alinear relationship, so L. on (100) surface can be obtained from anextrapolation of this relationship. This method was used to evaluateL. for many kinds of the growth conditions. The maximum L. and theprecursors' incorporation life-time were also deduced using theproposed method.