Band Offsets of III-V and II-VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

摘要

The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow one to simulate and predict the device performances. We present a temperature-dependent internal-photoemission spectroscopy (TDIPS) for studying the band offsets. Applications of the TDIPS into III-V and II-VI materials are discussed.