Advances in Composition Control for 16 #mu#m LPE P-on-n HgCdTe heterojunction Photodiodes for Remote Sensing Applications at 60K

TOBIN S.P.; WEILER M.H.; HUTCHINS M.A.

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Advances in Composition Control for 16 #mu#m LPE P-on-n HgCdTe heterojunction Photodiodes for Remote Sensing Applications at 60K

机译：用于60K遥感应用的16＃μ＃m LPE P-n-n HgCdTe异质结光电二极管成分控制的新进展

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来源
《Journal of Electronic Materials 》 |1999年第6期| 共7页
作者
TOBIN S.P.; WEILER M.H.; HUTCHINS M.A.;
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正文语种 eng
中图分类材料 ;
关键词
1/f noise; defects; HgCdTe; infrared detectors; photovoltaic; remote sensing;

机译：1 / f噪声;缺陷;HgCdTe;红外探测器;光伏;远程传感;

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1. Advances in Composition Control for 16 #mu#m LPE P-on-n HgCdTe heterojunction Photodiodes for Remote Sensing Applications at 60K [J] . TOBIN S.P., WEILER M.H., HUTCHINS M.A. Journal of Electronic Materials . 1999 ,第6期

机译：用于60K遥感应用的16＃μ＃m LPE P-n-n HgCdTe异质结光电二极管成分控制的新进展
2. Effect of a Valence-Band Barrier on the Quantum Efficiency and Background-Limited Dynamic Resistance of Compositionally Graded HgCdTe P-on-n Heterojunction Photodiodes [J] . M.H. WEILER, M.B. REINE Journal of Electronic Materials . 1995 ,第9期

机译：价带势垒对组成梯度HgCdTe P-n-n异质结光电二极管的量子效率和本底限制的动态电阻的影响
3. Planar p-on-n HgCdTe Heterojunction Mid-Wavelength Infrared Photodiodes Formed using Plasma-Induced Junction Isolation [J] . C. A. Musca, J. Antoszewski, J. M. Dell, Journal of Electronic Materials . 2003 ,第7期

机译：等离子体诱导结隔离法形成的平面对n型HgCdTe异质结中波长红外光电二极管
4. Advances in 15-um HgCdTe photovoltaic and photoconductive detector technology for remote sensing [C] . Marion B. Reine, Lockheed Martin IR Imaging Systems, Lexington, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices . 1996

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Advances in Composition Control for 16 #mu#m LPE P-on-n HgCdTe heterojunction Photodiodes for Remote Sensing Applications at 60K

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