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Field emission noise caused by capacitance coupling ESD in AMR/GMR heads

机译:由AMR / GMR磁头中的电容耦合ESD引起的场发射噪声

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We found field emission between the shield and the disk in AMR/GMR heads that was induced by a high voltage of the write driver. This paper discusses the mechanism of noise generation obtained using spin-stand, an electron beam probe measurement method and SPICE simulation. The source of noise in field emission is the current passing through the GMR element generated by capacitance coupling between the shield and the electrode. To prevent ESD/EOS damage to AMR/GMR heads, the effect of capacitance coupling between the GMR element and the write coil must be taken into account in the design of the AMR/GMR head structure for hard disk drives. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 11]
机译:我们发现在AMR / GMR磁头中,屏蔽层和磁盘之间的场发射是由写驱动器的高电压引起的。本文讨论了使用自旋支架,电子束探针测量方法和SPICE仿真获得的噪声产生机理。场发射中的噪声源是通过GMR元件的电流,该电流是由屏蔽层和电极之间的电容耦合产生的。为了防止ESD / EOS损坏AMR / GMR磁头,在硬盘驱动器AMR / GMR磁头结构的设计中,必须考虑GMR元件与写线圈之间的电容耦合效应。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:11]

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