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首页> 外文期刊>Journal of Electronic Testing: Theory and Applications: Theory and Applications >Low-Cost Testing of 5 GHz Low Noise Amplifiers Using New RF BIST Circuit
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Low-Cost Testing of 5 GHz Low Noise Amplifiers Using New RF BIST Circuit

机译:使用新型RF BIST电路对5 GHz低噪声放大器进行低成本测试

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摘要

This paper presents a new low-cost RF BIST (Built-in Self-Test) scheme that is capable of measuring input impedance, gain, noise figure and input return loss for a low noise amplifier (LNA) in RF systems. The RF BIST technique requires an additional RF amplifier and two peak detectors, and its output is a DC voltage level. The BIST circuit is designed using 0.18 μm SiGe technology. The test technique utilizes output DC voltage measurements and these measured values are translated into the LNA specifications such as input impedance and gain using the developed mathematical equations. Simulation results are presented for an LNA working at 5 GHz. Measurement data are compared with simulation results to validate the developed mathematical equations. The technique is simple and inexpensive.
机译:本文提出了一种新的低成本RF BIST(内置自测)方案,该方案能够测量RF系统中的低噪声放大器(LNA)的输入阻抗,增益,噪声系数和输入回损。 RF BIST技术需要一个附加的RF放大器和两个峰值检测器,其输出为DC电压电平。 BIST电路采用0.18μmSiGe技术设计。该测试技术利用输出直流电压测量值,并使用开发的数学方程式将这些测量值转换为LNA规范,例如输入阻抗和增益。给出了在5 GHz下工作的LNA的仿真结果。将测量数据与仿真结果进行比较,以验证所开发的数学方程式。该技术简单且便宜。

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