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首页> 外文期刊>Journal of Electronic Testing: Theory and Applications: Theory and Applications >An RTN Variation Tolerant SRAM Screening Test Design with Gaussian Mixtures Approximations of Long-Tail Distributions
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An RTN Variation Tolerant SRAM Screening Test Design with Gaussian Mixtures Approximations of Long-Tail Distributions

机译:RTN容错SRAM筛选测试设计,高斯混合近似长尾分布

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摘要

This paper points out that the ordinary screeningtest design (STD) will be no longer available when once the random telegraph noise (RTN) could not be ignored any more, resulting from a significantly increasing of the time-dependent modulation of the overall voltage-margin variations (OVMV). Since the major RTN effect on the OVMV modulation comes up after the screening, the actual precision of the STD must rely entirely upon the estimation accuracy of the RTN effect. The proposed STD is based on the developed statistical convolution model capable of fulfilling the following requirements: (1) precisely approximating the non Gaussian tail distribution of the RTN by simple Gaussian mixtures model (GMM), (2) accurately convoluting the RTN tail with the distribution of the Gaussian random dopant fluctuation (RDF). The proposed concepts are 1) sequentially and adaptively segmentation of the long tailed distributions such that the log-likelihood of the GMM in each segment is maximized. It has been verified that the proposed method can reduce the error of the fail-bit predictions by 3-orders of magnitude at the interest raw score where the fail probability pdf= 10~(-12) which corresponds to a 99.9% yield for 1Gbit chips.
机译:本文指出,一旦无法忽略随机电报噪声(RTN)时,由于总电压裕度随时间的调制明显增加,那么普通的筛选测试设计(STD)将不再可用。变体(OVMV)。由于对OVMV调制的主要RTN效应是在筛选后出现的,因此STD的实际精度必须完全取决于RTN效应的估计精度。建议的STD基于已开发的统计卷积模型,该模型能够满足以下要求:(1)通过简单的高斯混合模型(GMM)精确逼近RTN的非高斯尾巴分布,(2)用高斯随机掺杂物涨落(RDF)的分布。提出的概念是1)对长尾分布进行顺序和自适应分段,以使每个分段中GMM的对数似然性最大化。业已证明,该方法可以在感兴趣原始分数处将失败位预测的误差降低3个数量级,其中失败概率pdf = 10〜(-12),对应于1Gbit的99.9%的收益率筹码。

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