Chemically derived seeding layer for {100}-textured PZT thin films

摘要

PZT thin films are used extensively in micro electromechanical systems (MEMS) due to its high piezo-electric coefficients. The electromechanical responses can be optimized by using textured films where the transverse coefficient e{sub}(31,f) is of particular importance for MEMS structures such as cantilevers, bridges and membranes. It has been shown that {100}-textured PZT of morphotropic composition fabricated by chemical solution deposition (CSD) provides the highest transverse coefficient [1]. This specific texture can be obtained using a seeding layer of sputter deposited PbTiO{sub}3 [2]. However, in a CSD process it is advantageous to also be able to produce the seed layer by chemical methods. The piezoelectric and dielectric properties of 2 μm PZT film seeded by CSD PbTiO{sub}3 measured by a new 4-point bending setup are presented.