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Ellipsomicroscopic studies of the anodic oxidation of p-type silicon in fluoride containing electrolytes during current oscillations

机译:电流振荡过程中含氟电解质中p型硅阳极氧化的电镜观察

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摘要

We report spatially resolved studies of the electrodissolution of p-type silicon in fluoride containing elec-trolytes in the oscillatory regime with an ellipsometric microscope. In contrast to recent findings with n-type silicon electrodes, it is demonstrated that all sustained oscillations proceed uniformly on the entire electrode. From the spatially averaged data, the oxide layer thickness oscillations could he (semi) quantitatively evaluated. Assuming a linear potential drop across the oxide, phase relations between cur-rent density, oxide layer thickness and electric field in the oxide are discussed. Again in contrast to n-type silicon, in the chosen electrolyte oscillations are only stable with a sufficiently large ohmic resistance in series to the electrode electrolyte interface. They emerge through a supercritical Hopf-bifurcation when increasing the external voltage at a high series resistance or increasing the series resistance at some intermediate value of the applied voltage. At larger ammonium fluoride concentrations, complex periodic, quasi periodic and deterministically chaotic oscillations were observed. Implications of the experimental findings for the mechanism of the base oscillator and the synchronization of the oscillations are inferred.
机译:我们用椭偏显微镜报道了在振荡状态下含氟化物的电解质中p型硅的电溶解的空间分辨研究。与最近对n型硅电极的发现相反,已证明所有持续振荡均在整个电极上均匀进行。根据空间平均数据,可以(半)定量评估氧化物层厚度的波动。假设横跨氧化物的线性电势下降,讨论了电流密度,氧化物层厚度和氧化物中的电场之间的相位关系。再次与n型硅相反,在选择的电解质振荡中仅在与电极电解质界面串联的足够大的欧姆电阻的情况下才稳定。当以高串联电阻增加外部电压或以施加电压的某个中间值增加串联电阻时,它们会通过超临界Hopf分叉出现。在较高的氟化铵浓度下,观察到复杂的周期性,准周期性和确定性混沌振荡。推断出实验发现对于基本振荡器的机理和振荡的同步的含义。

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