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Effect of Bond lonicity on the Bandgap Bowing in Compound Semiconductor Alloys

机译:键离子强度对化合物半导体合金带隙弯曲的影响

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The existence and the origins of the bowing character in the bandgap of compound semiconductor alloys are investigated using the sp~3s~* tight-binding method which includes the spin–orbit coupling effects. As examples, we consider several ternary alloys among the composition of the Zn_yCd_(1-y) Se_xTe_(1-x) family. The results show that the common-cation ternary alloys (either y = 0 or 1) exhibit the bowing behavior as a consequence of the ionicity competition between the anions induced by the valence-band offset (VBO). On the other hand, the common-anion ternary alloys (either x = 0 or 1) do not possess the bowing behavior and their bandgaps vary almost linearly with composition (y). Such a linear behavior is claimed to be due to the lack of ionicity competition between the cations which is, in turn, consistent with the vanishing VBO. The favorable agreement between our theoretical results and the available experimental data corroborates our claim.
机译:利用包括自旋-轨道耦合效应的sp〜3s〜*紧密结合方法研究了化合物半导体合金带隙中弯曲特性的存在和起源。作为示例,我们考虑了Zn_yCd_(1-y)Se_xTe_(1-x)族组成中的几种三元合金。结果表明,由于价带偏移(VBO)引起的阴离子之间的离子性竞争,普通阳离子三元合金(y = 0或1)表现出弯曲性能。另一方面,普通阴离子三元合金(x = 0或1)不具有弯曲性能,并且带隙几乎随组成(y)线性变化。声称这种线性行为是由于阳离子之间缺乏离子性竞争,这又与消失的VBO一致。我们的理论结果与可用的实验数据之间的有利一致性证实了我们的主张。

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