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Dehalogenation of 1-chloro-1-fluoroethene to acetylene on alpha-Cr_2O_3 (1012)

机译:在α-Cr_2O_3上将1-氯-1-氟乙烯脱卤为乙炔(1012)

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摘要

The adsorption of CFCl = CH_2 on the nearly stoichiometric Cr_2O_3 (1012) surface results in a 1,1-dihaloelimination reaction to produce acetylene gas, HC ident to CH_(g), and adsorbed chlorine and fluorine. Thermal desorption experiments reveal two acetylene desorption features. The lower temperature acetylene channel is desorption limited (E_a = 92 kJ/mole), while the formation of fluorovinyl and/or vinylidene surface intermediates is suggested by the occurrence of a higher temperature (E_a = 124 kJ/mole) reaction-limited acetylene desorption channel. The deposition of halogen onto the sample surface by the CFCl = CH_2 decomposition reaction was found to initially increase the CFCl = CH_2 sticking coefficient and the activity for halogen coverages up to about one-third and then lead to deactivation at higher halogen coverages due to site blocking of the surface cations. No evidence was seen for the replacement of surface lattice oxygen by halogen under the conditions of this study. Surface that were preexposed to O_2 to site block surface cations with terminal chromyl oxygen were found not to react with CFCl = CH_2.
机译:CFCl = CH_2在接近化学计量的Cr_2O_3(1012)表面上的吸附会导致1,1-二卤代消除反应,从而生成乙炔气,与CH_(g)相同的HC,并吸附氯和氟。热脱附实验揭示了两个乙炔脱附特征。较低温度的乙炔通道受解吸限制(E_a = 92 kJ / mol),而较高温度(E_a = 124 kJ / mole)的反应限制了乙炔的解吸提示了氟乙烯和/或亚乙烯基表面中间体的形成渠道。发现通过CFCl = CH_2分解反应将卤素沉积在样品表面上,最初会增加CFCl = CH_2的黏着系数,并且卤素覆盖率的活性最多可增加约三分之一,然后由于位点导致卤素覆盖率较高时失活阻止表面阳离子。在本研究条件下,没有证据表明可以用卤素代替表面晶格氧。发现预先暴露于O_2的表面使末端的苯甲基铬氧阻断了表面阳离子,发现该表面不与CFCl = CH_2反应。

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