...
首页> 外文期刊>Journal of Computational Chemistry: Organic, Inorganic, Physical, Biological >The relationship between adsorption energies of methyl on metals and the metallic electronic properties: A first-principles DFT study
【24h】

The relationship between adsorption energies of methyl on metals and the metallic electronic properties: A first-principles DFT study

机译:甲基在金属上的吸附能与金属电子性能之间的关系:第一性原理DFT研究

获取原文
获取原文并翻译 | 示例

摘要

A theoretical study of CH3 adsorbed on the (111) surface of some transition and noble metal surfaces M (M = Cu, Ni, Rh, Pt, Pd, Ag, Au) and on the Fe(100) is presented. We find that the hollow site is preferred more than the top one for Fe, Ni, Rh, and Cu, but it is the other way for Pt, Pd, Au, and Ag. In addition, a good linear relationship was observed between the chemisorption energy and d-band center for Group VIII metals or the square of the coupling matrix element for Group 113 metals at the hollow site. Interestingly, with a detailed comparison of the adsorption energies at the top and hollow sites, we find that the adsorption energies among each group are very similar on the top site, which supports the theoretical model of Hammer and Norskov that the coupling between the HOMO of adsorbate and sp states of the metal is dominant and almost equal, and that the second coupling to the d-band contributes less but reflects the change of the adsorption energy. It confirms that the coupling to the d band comprises two opposite factors, that is, the d-band center was attractive and the square of the coupling matrix element was repulsive, such that the contributions from the two factors can counteract each other at the top site. (c) 2005 Wiley Periodicals, Inc.
机译:提出了一些过渡金属和贵金属表面M(M = Cu,Ni,Rh,Pt,Pd,Ag,Au)和Fe(100)的(111)表面吸附的CH3的理论研究。我们发现,对于Fe,Ni,Rh和Cu,中空部位比顶部部位更受青睐,而对于Pt,Pd,Au和Ag,中空部位更为可取。另外,在空心位点处,第VIII族金属的化学吸附能与d-带中心或第113族金属的耦合基体元素的平方之间观察到良好的线性关系。有趣的是,通过详细比较顶部和空心位置的吸附能,我们发现各组之间的吸附能量在顶部位置非常相似,这支持了Hammer和Norskov的理论模型:金属的吸附态和sp态占主导地位且几乎相等,并且与d带的第二次耦合贡献较小,但反映了吸附能的变化。它证实了与d波段的耦合包括两个相反的因素,即d波段中心很吸引人,耦合矩阵元素的平方是排斥的,因此这两个因素的贡献可以在顶部互相抵消。现场。 (c)2005年Wiley Periodicals,Inc.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号