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Effect of Br gassing after Ar plasma treatment of polyolefins

机译:Ar等离子体处理聚烯烃后Br放气的影响

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For simulation and acceleration of artificial polymer ageing, polyolefln foils were exposed to low-pressure Ar plasma. Plasma particle bombardment and irradiation induce C-C and C-H bond scissions by σ—σ~* excitations on the surface and in near-surface layers. Consequently, radicals are generated. They react by recombination, cross-linking, metastable trapping of the radical site or formation of olefinic double bonds. The long-living and metastable trapped C-radicals as well as double bonds in polyolefins were immediately exposed to bromine vapour without breaking the vacuum after switching-off the plasma. These reactive sites rapidly react with the molecular bromine under formation of C-Br bonds. For 5 min of argon plasma exposure, the elemental concentration of bromine was 13% for polyethylene and 22% Br/C for polypropylene as analysed by X-ray photoelectron spectroscopy. Nevertheless, not all C radical sites have reacted with bromine. Later on, when the polyolefins brought in contact with ambient air, an additional post-plasma reaction of the remaining trapped radicals with oxygen was observed. The oxygen concentrations were lower after bromine gassing, thus repressing partially the post-plasma oxidation in the analysed layer (ca. 6 nm) by radical quenching. Such bromination took place either at the surface or in near-surface layers because the Attenuated Total Reflectance (ATR)-FTIR spectra (sampling depth ca. 2500 nm) did not show significant changes for argon plasma-treated PE foils with and without bromine vapour exposure. Further addition of bromine may also occur on C=C double bonds.
机译:为了模拟和加速人工聚合物的老化,将聚烯烃薄膜置于低压Ar等离子体中。等离子体粒子轰击和辐照通过表面和近表面层中的σ-σ〜*激发引起C-C和C-H键断裂。因此,产生了自由基。它们通过重组,交联,自由基位点的亚稳态捕获或形成烯烃双键而发生反应。关闭等离子体后,长寿命且亚稳态的捕获C自由基以及聚烯烃中的双键立即暴露在溴蒸气中,而不会破坏真空。这些反应性位点在形成C-Br键后迅速与分子溴反应。通过X射线光电子能谱分析,对于氩气等离子体暴露5分钟,聚乙烯的溴元素浓度为13%,聚丙烯的溴元素浓度为22%。然而,并非所有的C自由基位点都与溴反应。后来,当聚烯烃与环境空气接触时,观察到其余捕获的自由基与氧气发生了额外的等离子体后反应。溴气放出后,氧浓度较低,因此通过自由基猝灭在分析层中(约6 nm)部分抑制了等离子体后氧化。这种溴化发生在表面或近表面层,因为衰减的全反射率(ATR)-FTIR光谱(采样深度约为2500 nm)对于使用和不使用溴蒸气的经氩气等离子体处理的PE箔没有显着变化。接触。在C = C双键上还可发生溴的进一步添加。

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