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Degradation behavior of thin polystyrene films on exposure to Ar plasma and its emitted radiation

机译:聚苯乙烯薄膜在暴露于Ar等离子体及其辐射下的降解行为

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Spin-coated films of amorphous polystyrene (PS) were exposed to argon plasma for a few seconds to several minutes. The PS film was either in direct contact with the plasma or was shielded from the direct plasma contact by filters with different cutoff wavelengths in the vacuum UV region or by a Faraday cage (FC) made from metal mesh to prevent the impinging of charged species. Only energy-rich neutrals and plasma radiation may be operative in presence of the FC. lithium fluoride (LiF) filter protects the sample from direct contact with the plasma. Wavelengths of plasma radiation shorter than c. 105 nm (≈ 11.8 eV) were cut off. Glass filters made of fused SiO2 have a cutoff at λ ≈175 nm completely the vacuum UV radiation of plasma (ca. 175nm ≈ 7.0 eV). These energies are sufficient to produce C-C, C-H bond scissions in case of direct Ar plasma exposure and Ar plasma exposure with use of the LiF filter. Only quartz glass shielding did not produce significant effects on the polymer surface in comparison to the reference PS, either in surface energy or O/C ratio or in IR spectra. Oxygen plasma has worked most aggressive and had etched the PS film, thus establishing a steady state between introduction of new oxygen functionalities and polymer etching. Ar plasma exposure produces also oxidation and etching of the polymer films as the oxygen plasma. Using of a FC during Ar plasma exposure or the LiF filter a slightly weaker oxidation was observed.
机译:将无定形聚苯乙烯(PS)的旋涂膜暴露于氩等离子体中几秒钟到几分钟。 PS膜与等离子体直接接触,或者通过在真空UV区域具有不同截止波长的滤光片或由金属网制成的法拉第笼(FC)屏蔽直接等离子体接触,以防止带电物质撞击。在FC存在的情况下,只有能量丰富的中性点和等离子体辐射才有效。氟化锂(LiF)过滤器可防止样品直接与血浆接触。等离子体辐射的波长短于c。截断了105 nm(≈11.8 eV)。由熔融SiO2制成的玻璃滤光片在λ≈175nm处有一个截止点,完全是等离子体的真空UV辐射(约175nm≈7.0 eV)。在直接进行Ar等离子体暴露和使用LiF过滤器进行Ar等离子体暴露的情况下,这些能量足以产生C-C,C-H键断裂。与参考PS相比,在表面能或O / C比或IR光谱方面,仅石英玻璃屏蔽层不会对聚合物表面产生明显影响。氧等离子体的侵蚀性最强,并且已经蚀刻了PS膜,因此在引入新的氧官能团和聚合物蚀刻之间建立了稳定状态。 Ar等离子体暴露还产生作为氧等离子体的聚合物膜的氧化和蚀刻。在Ar等离子体暴露或使用LiF过滤器期间使用FC,观察到了稍弱的氧化。

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