In this work, the compressive buckling of a nanowire partially bonded to an elastomeric substrate is studied via finite-element method (FEM) simulations and experiments. The buckling profile of the nanowire can be divided into three regimes, i.e., the in-plane buckling, the disordered buckling in the out-of-plane direction, and the helical buckling, depending on the constraint density between the nanowire and the substrate. The selection of the buckling mode depends on the ratio d/h, where d is the distance between adjacent constraint points and h is the helical buckling spacing of a perfectly bonded nanowire. For d/h> 0.5, buckling is in-plane with wavelength lambda = 2d. For 0.27 <= d/h < 0.5, buckling is disordered with irregular out-of-plane displacement. While, for d/h < 0.27, buckling is helical and the buckling spacing gradually approaches to the theoretical value of a perfectly bonded nanowire. Generally, the in-plane buckling induces smaller strain in the nanowire, but consumes the largest space. Whereas the helical mode induces moderate strain in the nanowire, but takes the smallest space. The study may shed useful insights on the design and optimization of high-performance stretchable electronics and three-dimensional complex nanostructures.
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机译：在这项工作中，通过有限元方法（FEM）的模拟和实验研究了部分键合到弹性体基底上的纳米线的压缩屈曲。取决于纳米线和基板之间的约束密度，纳米线的屈曲轮廓可分为三种状态，即，平面内屈曲，平面外方向上的无序屈曲和螺旋屈曲。屈曲模式的选择取决于比率d / h，其中d是相邻约束点之间的距离，h是完美结合的纳米线的螺旋屈曲间距。对于d / h> 0.5，屈曲在平面内，波长λ= 2d。对于0.27 <= d / h <0.5，屈曲会因不规则的平面外位移而混乱。而对于d / h <0.27，屈曲为螺旋形，屈曲间距逐渐接近完美键合纳米线的理论值。通常，面内弯曲在纳米线中引起较小的应变，但是消耗最大的空间。螺旋模式在纳米线中引起中等应变，但占据的空间最小。该研究可能对高性能可拉伸电子器件和三维复杂纳米结构的设计和优化提供有用的见识。
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