INFLUENCE OF IODINE-CONTAINING SOLUTIONS ON THE CONDITION OF A POROUS SILICON SURFACE AND ITS PHOTOLUMINESCENT PROPERTIES

摘要

The influence of surface treatment of porous silicon in iodine-containing solutions on its photoluminescent properties has been investigated. The porous silicon samples were prepared by anodizing in HF-based electrolytes and placed in fluoride-hydrogen solutions with the addition of iodine immediately after their formation. The surface condition was controlled by IR Fourier spectroscopy methods in the 400-4000-cm{sup}(-1) range. It has been established that the result of the porous silicon treatment in iodine-containing solutions is a decrease in the intensity of Si-H{sub}x-bonds without the appearance of additional vibrations in the range under investigation. At the same time, such a treatment substantially affects the spectrum and intensity of porous silicon photoluminescence and increases its stability in subsequent storage. The possible reasons for the revealed phenomena are discussed.