Study of the dielectric constant of polyurethane/polybutyl-methacrylate interpenetrating polymer networks using metal-insulator-semiconductor structure

摘要

Polyurethane/polybutyl-methacrylate interpenetrating polymer networks (IPNs) film was formed on n-Si substrate by the dropping technique. When aluminum (Al) was vacuum deposited on the top of the film, the Al/IPNs-Si (metal-insulator-semiconductor) structure was fabricated successfully. With the aid of the high-frequency capacitance-voltage (C-V) characteristics at room temperature, the dielectric constant of IPNs was obtained. In the C-V curves, an increased hysteresis at high sweep voltage and a plateau in the depletion region were observed. This plateau indicates that the unsaturated bonds beyond IPNs film could act as electron well at the applied voltage above 10 V. (C) 2000 John Wiley & Sons, Inc. [References: 26]