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Effect of hydrogen doping on the loading of titania nanotube films with copper selenide species via alternating current deposition

机译:氢沉积对交流电沉积硒化铜负载二氧化钛纳米管薄膜的影响

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Fabrication of TiO2 nanotube (TiNT) films nicely decorated with lower band gap semiconducting nanoparticles remains a challenging issue for photocatalytic and solar cell applications active under visible light irradiation. In this study, TiNT films were decorated with copper selenide species via alternating current deposition method. For the first time, to achieve uniform loading of copper selenide species inside the TiNT film, as-grown and calcined TiNT films before depositions were subjected to hydrogen doping in various solutions under DC and AC pretreatments as well as by treating TiNT in H-2 atmosphere. Different pretreatments resulted in different architectures of Cu (x) Se-in-TiNT formed by subsequent AC deposition from the acidic Cu(II)-H2SeO3 solution allowing predictable to encase Cu2Se3, Cu2Se, CuSe, or Cu2-x Se species in nm-scaled size. Field-emission scanning electron microscopy with EDS and X-ray mapping, low-angle X-ray diffraction, and diffuse reflectance spectroscopy were applied to characterize the morphology, composition, uniformity of loading, and optical properties of the fabricated heterostructures. Except light absorption, characteristic for anatase TiO2, the additional absorption edge in the visible region is formed in the TiNT films decorated with copper selenide.
机译:用低带隙半导体纳米颗粒很好地装饰的TiO2纳米管(TiNT)膜的制造对于在可见光照射下活跃的光催化和太阳能电池应用仍然是一个挑战性的问题。在这项研究中,通过交流沉积方法用硒化铜物种装饰TiNT膜。为了使硒化铜物种均匀地负载在TiNT膜中,首次将成膜和煅烧的TiNT膜在沉积之前进行了各种溶液的氢掺杂,分别在DC和AC预处理下以及通过在H-2中处理TiNT大气层。不同的预处理导致通过酸性Cu(II)-H2SeO3溶液的后续AC沉积形成的Cu(x)Se-in-TiNT结构不同,从而可预测地将Cu2Se3,Cu2Se,CuSe或Cu2-x Se物种包裹在nm-缩放的大小。使用具有EDS和X射线映射,低角度X射线衍射和漫反射光谱的场发射扫描电子显微镜来表征所制造异质结构的形貌,组成,负载均匀性和光学性质。除了具有锐钛矿型TiO2的光吸收特性外,在可见区中的其他吸收边缘会在装饰有硒化铜的TiNT薄膜中形成。

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