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首页> 外文期刊>Journal of Applied Electrochemistry >Role of alloyed silicon and some inorganic inhibitors in the inhibition of meta-stable and stable pitting of Al in perchlorate solutions
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Role of alloyed silicon and some inorganic inhibitors in the inhibition of meta-stable and stable pitting of Al in perchlorate solutions

机译:合金化硅和某些无机抑制剂在抑制高氯酸盐溶液中亚稳和稳定点蚀中的作用

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The study of both meta-stable and stable pitting events on the surface of pure Al and three Al-Si alloys, namely (Al + 6% Si), (Al + 12% Si) and (Al + 18% Si) alloys, was carried out in deaerated neutral NaClO4 solutions of various concentrations (10(-4)-10(-2) M). Measurements were carried out under the effect of various experimental conditions using potentiodynamic anodic polarization and potentiostatic techniques. The results presented below showed that meta-stable pits (appeared as oscillations in current) form at potentials close to the pitting potential (E-pit) and during the induction time for stable pit formation. Various factors affecting the rate of meta-stable and stable pits were studied. The presence of Si as an alloying element in Al reduces the rate of formation of meta-stable pits, corresponding to a reduction in the probability of developing stable pits, and an increase in the pitting potential results. The inhibitive effects of chromate, silicate, molybdate and tungstate on pitting corrosion in Al were also studied. Results obtained showed that these known inhibitors retard both meta-stable and stable pitting events. This makes attainment of stable pit growth more difficult in presence of these inhibitors.
机译:研究纯Al和三种Al-Si合金(Al + 6%Si),(Al + 12%Si)和(Al + 18%Si)合金表面上的亚稳态和稳定点蚀事件,在各种浓度(10(-4)-10(-2)M)的脱气中性NaClO4溶液中进行。在各种实验条件的影响下,使用恒电位阳极极化和恒电位技术进行测量。以下显示的结果表明,亚稳态凹坑(以电流振荡形式出现)在接近凹坑电位(E凹坑)的电位处以及在稳定凹坑形成的感应时间内形成。研究了影响亚稳态和稳定坑率的各种因素。 Si作为Al中的合金元素的存在降低了亚稳态凹坑的形成速率,这对应于形成稳定凹坑的可能性的降低,并且导致了凹坑电位的增加。还研究了铬酸盐,硅酸盐,钼酸盐和钨酸盐对铝中点蚀的抑制作用。获得的结果表明,这些已知的抑制剂既抑制了亚稳定事件又抑制了稳定的点蚀事件。在这些抑制剂的存在下,使稳定的小坑生长更加困难。

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