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首页> 外文期刊>Journal of Applied Crystallography >Microstructural analysis of integrated pin-shaped two-dimensional and three-dimensional ferroelectric capacitors from micro-focused synchrotron X-ray techniques
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Microstructural analysis of integrated pin-shaped two-dimensional and three-dimensional ferroelectric capacitors from micro-focused synchrotron X-ray techniques

机译:基于微聚焦同步加速器X射线技术的集成式针形二维和三维铁电电容器的微观结构分析

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Future development of ferroelectric random access memory requires the integration of three-dimensional ferroelectric capacitors (FeCAP) in a microelectronic architecture. In this paper, pin-shaped two-dimensional and three-dimensional Sr0.8Bi2.2Ta2O9-based FeCAP arrays were characterized using an original approach combining micro-focused synchrotron X-ray fluorescence and diffraction. From a modelling approach, dimensional, chemical and microstructural details were extracted over a series of capacitor arrays. Hence, these techniques proved insightful for a non-destructive benchmarking approach. In addition, for all investigated capacitor geometries, the micro-fluorescence experiments evidenced a well controlled chemical composition within the FeCAP arrays, attesting the stability of the elaboration and integration steps. Nevertheless, micro-diffraction experiments have indicated a lower control of the ferroelectric film crystallographic orientation from one capacitor to the next, despite a well defined chemical composition. This feature was attributed to the presence of patterned bottom electrodes, bringing to light the role of the slanted capacitor sidewalls in the three-dimensional geometry and partially explaining the non-optimized electrical polarization usually measured in three-dimensional capacitors with respect to planar geometry.
机译:铁电随机存取存储器的未来发展要求在微电子架构中集成三维铁电电容器(FeCAP)。本文采用结合微聚焦同步加速器X射线荧光和衍射的原始方法对销形二维和三维Sr0.8Bi2.2Ta2O9基FeCAP阵列进行了表征。通过建模方法,通过一系列电容器阵列提取了尺寸,化学和微结构细节。因此,这些技术被证明对非破坏性基准测试方法很有见地。此外,对于所有调查的电容器几何形状,微荧光实验证明FeCAP阵列中的化学成分得到了很好的控制,证明了精制步骤和集成步骤的稳定性。尽管如此,尽管化学成分定义明确,但微衍射实验表明,从一个电容器到另一个电容器对铁电薄膜晶体取向的控制较低。该特征归因于图案化的底部电极的存在,从而揭示了倾斜的电容器侧壁在三维几何结构中的作用,并部分解释了通常在三维电容器中相对于平面几何形状测量的非优化电极化。

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