首页> 外文期刊>Journal of Applied Crystallography >Optimization of the thickness of a ZnS/ ~6LiF scintillator for a high-resolution detector installed on a focusing small-angle neutron scattering spectrometer (SANS-U)
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Optimization of the thickness of a ZnS/ ~6LiF scintillator for a high-resolution detector installed on a focusing small-angle neutron scattering spectrometer (SANS-U)

机译:优化安装在聚焦小角中子散射光谱仪(SANS-U)上的高分辨率探测器的ZnS /〜6LiF闪烁体的厚度

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摘要

This study involves the upgrade of a high-resolution position-sensitive detector (HR-PSD) installed on the small-angle neutron scattering spectrometer (SANS-U) at the Japan Atomic Energy Agency. By using both neutron lenses and the HR-PSD, the accessible low-Q limit can be extended to the order of 10 ~(-4) ? ~(-1) [Q is the magnitude of the scattering vector defined by Q = (4π/λ)sin, where and 2 are the wavelength and the scattering angle, respectively]. The HR-PSD consists of a cross-wired position-sensitive photomultiplier tube (PSPMT) and a commercial ZnS/ ~6LiF scintillator. To improve the experimental efficiency of focusing small-angle neutron scattering (FSANS) experiments, a high-performance ZnS/ ~6LiF scintillator developed at the Japan Atomic Energy Agency has been utilized. For the PSPMT and data-acquisition system installed on SANS-U, the thickness of the ZnS/ ~6LiF scintillator was optimized by measuring the thickness dependence of the pulse-height spectra. Under the experimental conditions of SANS-U, the optimum thickness of the ZnS/ ~6LiF scintillator (ZnS: 6LiF = 2:1) was determined to be 0.433 mm by measuring the total counts and peak positions of the pulse-height spectra. Installation of the optimized ZnS/ ~6LiF scintillator improved detection efficiency by 1.39 times over that of a commercial scintillator at the same level of background counts and Q resolution in FSANS experiments.
机译:这项研究涉及日本原子能机构小角度中子散射光谱仪(SANS-U)上安装的高分辨率位置敏感探测器(HR-PSD)的升级。通过同时使用中子透镜和HR-PSD,可达到的低Q限可以扩展到10〜(-4)? 〜(-1)[Q是由Q =(4π/λ)sin定义的散射矢量的大小,其中和2分别是波长和散射角]。 HR-PSD由交叉接线的位置敏感光电倍增管(PSPMT)和商用ZnS /〜6LiF闪烁体组成。为了提高聚焦小角中子散射(FSANS)实验的实验效率,已使用了日本原子能机构开发的高性能ZnS /〜6LiF闪烁体。对于SANS-U上安装的PSPMT和数据采集系统,通过测量脉冲高度谱的厚度依存关系来优化ZnS /〜6LiF闪烁体的厚度。在SANS-U的实验条件下,通过测量脉冲高度谱的总计数和峰位置,确定ZnS /〜6LiF闪烁体(ZnS:6LiF = 2:1)的最佳厚度为0.433 mm。在FSANS实验中,在相同背景计数和Q分辨率水平下,安装优化的ZnS /〜6LiF闪烁体比商用闪烁体的检测效率提高了1.39倍。

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