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Low-T_c ramp-type Josephson junctions for SQUIDs

机译:SQUID的低T_c斜坡型约瑟夫逊结

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摘要

The Josephson tunnel junction is the basic element of a superconducting quantum interference device (SQUID0. Amongst other parameters, the junction capacitance determines the characteristics of a (digital) SQUID. in a conventional dc SQUID, reducing the junction capacitance decreases the flux noise of the sensor, whereas in digital SQUIDs, the operating frequency can be increased when reducing the junction capacitance. For digital SQUIDs, this means that no only the flux noise decreases, but also the flux slew rate increases. Slew rates up to 10~8 Φ_0/s can be achieved by reducing the junction size to the sub-μm~2 level. Using a ramp-type structure allows sub-μm~2 Josephson junctions sizes using standard lithography. In this paper we present the first results on low-T_c ramp-type Josephson junctions and dc SQUIDs based on these junctions. The first junctions and SQUIDs showed nonhysteretic behavior at 4.2 K caused by the Al bottom layer in the design.
机译:约瑟夫森隧道结是超导量子干扰设备(SQUID0)的基本元素。在其他参数中,结电容决定了常规dc SQUID中(数字)SQUID的特性,减小结电容可降低电感的通量噪声。传感器,而在数字SQUID中,减小结电容可以提高工作频率;对于数字SQUID,这不仅意味着磁通量噪声降低,而且磁通摆率增加,压摆率高达10〜8Φ_0/ s可以通过将结尺寸减小到亚微米级〜2μm来实现。采用斜面型结构允许使用标准光刻技术实现亚微米〜2约瑟夫森结尺寸。在本文中,我们介绍了低T_c斜率的第一个结果型约瑟夫森结和基于这些结的直流SQUID,第一个结和SQUID在设计中由于Al底层在4.2 K下表现出无滞后行为。

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