We have prepared thin RuO_2 films by thermal evaporation metal organic chemical vapour deposition on r-plane Al_2O_3, MgO, LaAlO_3 and SrTiO_3 single crystal substrates. The films were grown at deposition temperature T_D = 500 ℃. X-ray diffraction analysis show different type of preferred growth, depending on a substrate. Atomic force microscopy revealed typical surface morphology for each type of substrate. Room temperature resistivity of the films on various substrates varied between 30 and 40 μΩcm. The best parameters were obtained for epitaxialy grown RuO_2 film on the r-plane cut Al_2O_3 substrate with a room temperature resistivity about 30 μΩcm and residual resistivity ratio (resistivity ratio between room temperature and 4.2 K) close to 30.
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