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首页> 外文期刊>Journal de Physique, IV: Proceedings of International Conference >A model of coherent creep and switching in charge density wave conduction in NbSe_3 at low temperatures
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A model of coherent creep and switching in charge density wave conduction in NbSe_3 at low temperatures

机译:低温下NbSe_3中电荷密度波传导的相干蠕变和转换模型

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A model is proposed of the temporally ordered collective creep with finite threshold field, and of the "switching" transition to a highly conducting state at a higher threshold, observed in charge-density wave conduction in niobium triselenide by Lemay et al. [Phys. Ev. Lett. 83, 2793 (1999)]. the model is based on their suggestion that the creep involves the thermally activated advance of wavelengths of CDW past individual impurities. In the model this is achieved by the formation near the impurity of a dislocation loop, which collapses after encircling it. Switching is attributed to a transition, induced by stress associated with the motion, to a situation in which collapse is avoided. enabling the CDW to advance indefinitely. The model accounts quantitatively for the observed creep, and exhibits switching and hysteresis qualitatively similar to that observed.
机译:提出了一个模型,该模型具有有限阈值场的时间有序集体蠕变,以及在Lesel等人在三硒化铌中的电荷密度波传导中观察到的,在较高阈值处“切换”转变为高传导态的模型。 [物理Ev。来吧83,2793(1999)]。该模型基于他们的建议,即蠕变涉及CDW穿过单个杂质的波长的热活化提前。在模型中,这是通过在位错环的杂质附近形成而实现的,位错环的杂质在环绕后会塌陷。切换归因于由与运动相关联的应力引起的过渡,其中避免了崩溃的情况。使CDW无限前进。该模型定量地说明了所观察到的蠕变,并且在质量上表现出与所观察到的相似的转换和滞后。

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