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Nature of the electronic states involved in the chemical bonding and superconductivity at high pressure in SnO

机译:SnO中涉及高压化学键合和超导的电子态的性质

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We have investigated the electronic structure and the Fermi surface of SnO using density functional theory calculations within recently proposed exchange-correlation potential (PBE + mBJ) at ambient conditions and high pressures up to 19.3 GPa where superconductivity was observed. It was found that the Sn valence states (5s, 5p, and 5d are strongly hybridized with the O 2p states, and that our density functional theory calculations are in good agreement with O K-edge X-ray spectroscopy measurements for both occupied and empty states. It was demonstrated that the metallic states appearing under pressure in the semiconducting gap stem due to the transformation of the weakly hybridized O 2p-Sn 5sp subband corresponding to the lowest valence state of Sn in SnO. We discuss the nature of the electronic states involved in chemical bonding and formation of the hole and electron pockets with nesting as a possible way to superconductivity.
机译:我们已经使用密度泛函理论计算研究了SnO的电子结构和费米表面,该计算方法是在最近提出的交换相关电位(PBE + mBJ)的环境条件和高达19.3 GPa的高压下观察到的。发现Sn价态(5s,5p和5d与O 2p态强烈杂交),并且我们的密度泛函理论计算与O K边缘X射线光谱法对占据和空位的测量都非常吻合结果表明,由于与SnO中Sn的最低价态相对应的弱杂交O 2p-Sn 5sp子带的转变,半导体间隙杆中在压力下出现了金属态。我们讨论了电子态的性质参与化学键合以及空穴和电子口袋的形成,并可能通过嵌套来实现超导。

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