Thin films of rare-earth nickelates are of great interest due to their unique electrophysical properties and the possibility to be used in microelectronic devices [1]. Therefore, the development of methods for their preparation is an important problem. Nickelates of rare-earth metals, starting with samarium, can be synthesized as bulk solids only at a high oxygen pressure (P > 10~7 Pa) [1]. However, they can be synthesized as thin films under much milder conditions (P < 10~5 Pa) due to epitaxial stabilization on substrates with close crystallo-graphic parameters [2].
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