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CVD growth and field emission characteristics of nano-structured films composed of vertically standing and mutually intersecting nano-carbon sheets

机译:由垂直站立且相互交叉的纳米碳片组成的纳米结构薄膜的CVD生长和场发射特性

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摘要

Nano-structured films composed of rather flat nano-carbon sheets which roughly stood vertically on Si wafers and which intersected each other at large angles were grown by means of a high-power microwave-plasma chemical-vapour-deposition (MWPCVD) method. The structure of the fabricated films was investigated using scanning electron microscopes and Raman spectroscopy. Field emission (FE) currents obtained from these films reached 50 mA/cm~2 at a macroscopic electric field of 3.6 V/mu m. The observed FE characteristics were analyzed using a modified Fowler-Nordheim (F-N) equation where the field enhancement factor and effective emission area were treated as field-dependent parameters. It was found from the analysis that the vertically standing nano-carbon flat sheets had larger field enhancement factors and less FE areas, compared with those obtained for wrinkled nano-carbon sheets previously reported by the authors. It is suggested that the observed variations in the FE current without saturation behavior as a function of the macroscopic electric field can be explained in terms of an effective surface geometry phenomenon of the concerned films.
机译:通过大功率微波等离子体化学气相沉积(MWPCVD)方法,生长了由相当平坦的纳米碳片组成的纳米结构膜,该碳膜大致垂直地竖立在硅片上,并且以大角度彼此交叉。使用扫描电子显微镜和拉曼光谱研究了所制造的膜的结构。在3.6V /μm的宏观电场下,从这些膜获得的场发射(FE)电流达到50mA / cm〜2。使用改良的Fowler-Nordheim(F-N)方程分析观察到的有限元特性,其中将场增强因子和有效发射面积视为场相关参数。从分析中发现,与作者先前报道的起皱纳米碳片相比,垂直站立的纳米碳片具有更大的场增强因子和更小的FE面积。建议可以根据所关注的膜的有效表面几何现象来解释所观察到的没有饱和行为的FE电流随宏观电场的变化。

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