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Surface properties and field emission of boron nitride

机译:氮化硼的表面性质和场发射

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Boron nitride (BN) and boron carbon nitride (BCN) films with various carbon (C) composition ratios are synthesized by plasma-assisted chemical vapor deposition. The electron affinity of the BN and BCN films is estimated from the threshold energy of the photoelectron yield and the bandgap energy. Negative electron affinity is observed for the BN film. On the other hand, the positive electron affinity is observed for the BCN films. It is found that a reduction in the electron affinity occurs due to N_2 plasma treatment rather than H_2 plasma treatment for the BCN film. Field emission characteristics of the BN and BCN nanofilms are investigated. The turn-on electric field of the electron emission does not increase in the region of the C composition ratio lower than 20 percent. Also shown is the turn-on electric field of the BCN nanofilm treated with N_2 or H_2 plasma. A variation in the field emission characteristics is related to the surface properties such as electron affinity and surface roughness in addition to the conduction band discontinuity between the BCN nanofilm and Si substrate. It is demonstrated that the BCN film emits electrons at a pressure as high as 8-l0 x l0~(-4) Torr at which field emission characteristics of the carbon nanotube degrade rapidly.
机译:通过等离子体辅助化学气相沉积合成具有不同碳(C)组成比的氮化硼(BN)和氮化硼碳(BCN)膜。 BN和BCN膜的电子亲和力是根据光电子产率的阈值能量和带隙能量估算的。对于BN膜观察到负电子亲和力。另一方面,对于BCN膜观察到正电子亲和力。发现对于BCN膜,由于N_2等离子体处理而不是H_2等离子体处理,导致电子亲和力降低。研究了BN和BCN纳米膜的场发射特性。在C组成比低于20%的区域中,电子发射的开启电场不增加。还示出了用N_2或H_2等离子体处理的BCN纳米膜的开启电场。除了在BCN纳米膜和Si衬底之间的导带不连续之外,场发射特性的变化还与诸如电子亲和力和表面粗糙度之类的表面特性有关。结果表明,BCN薄膜以高达8-10 x 10〜(-4)Torr的压力发射电子,在此压力下碳纳米管的场发射特性迅速下降。

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