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Influence on the sp~3/sp~2 character of the carbon on the insertion of nitrogen in RFMS carbon nitride films

机译:碳的sp〜3 / sp〜2特性对RFMS氮化碳膜中氮的插入的影响

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RFMS carbon nitride films have been elaborated at several substrate temperatures between 150 deg C and 450 deg C, where they evolve from a -highly resistive to highly conductive comportment. Their local structure has been determined from X-ray photoemission, Raman and infrared spectroscopic results. The films composition has been measured by nuclear reaction analysis and elastic recoil detection. We will correlate the strong modifications of the electronic properties of the films to their well characterized structural changes. We will show how the substrate temperature acts on the incorporation of nitrogen in carboneous RFMS films and which is the resulting consequence on the sp3/ sp~2 character of the carbon network.
机译:RFMS氮化碳膜是在150摄氏度至450摄氏度之间的几种基板温度下制作而成的,在这种温度下,氮化碳薄膜从高电阻转变为高导电性。它们的局部结构已由X射线光发射,拉曼光谱和红外光谱结果确定。通过核反应分析和弹性反冲检测来测量膜组成。我们将把薄膜的电子特性的强大变化与其特征鲜明的结构变化联系起来。我们将显示基质温度如何影响碳质RFMS膜中氮的掺入,以及碳网络的sp3 / sp〜2特性的结果。

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