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An atomic force microscopy study of the effects of surface treatments of diamond films produced by chemical vapor deposition

机译:原子力显微镜研究化学气相沉积生产的金刚石薄膜表面处理的效果

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摘要

Diamond films produced by chemical vapor deposition (CVD) technique must be polished and machined in order to be used for many applications (windows, heat spreaders, surface acoustic wave devices, etc). We present an Atomic Force Microscopy study of the effects of mechanical polishing, hydrogen plasma etching, and ion implantation followed by annealing and chemical etching, on the morphology of Microwave Plasma CVD polycrystalline diamond films. Both growth and nucleation sides of 0.3-0.5 mm thick free-standing films were characterized. We found that grain boundaries and anisotropy of mechanical properties (hardness and wear rate) mostly contribute to the overall roughness of Microwave Plasma CVD diamond films, which is below 0.2 nm at the single-grain scale. The further deposition of a diamond overlayer, even of small thickness, on highly polished polycrystalline diamond, results in a variety of growth modes and different growth rates depending on the grain orientation, leading to the roughness increase. Hydrogen plasma etching proved to be effective for inducing morphological and chemical changes on the surface, while an ion implantation/annealing/etching can be used for precise removal of thin diamond layers. The latter approach is promising for diamond lithography
机译:通过化学气相沉积(CVD)技术生产的金刚石薄膜必须进行抛光和机械加工才能用于许多应用(窗户,散热器,表面声波设备等)。我们提出了一种原子力显微镜研究,该研究对机械抛光,氢等离子体蚀刻和离子注入,然后进行退火和化学蚀刻,对微波等离子体CVD多晶金刚石膜的形貌产生影响。表征了0.3-0.5 mm厚的自支撑薄膜的生长面和成核面。我们发现,晶界和机械性能(硬度和磨损率)的各向异性在很大程度上影响了微波等离子体CVD金刚石膜的整体粗糙度,在单晶粒度下其粗糙度低于0.2 nm。在高度抛光的多晶金刚石上进一步沉积甚至很小厚度的金刚石覆盖层,会导致多种生长方式和取决于晶粒取向的不同生长速率,从而导致粗糙度增加。氢等离子体蚀刻被证明可有效诱导表面的形态和化学变化,而离子注入/退火/蚀刻可用于精确去除金刚石薄层。后一种方法有望用于金刚石光刻

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