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Field emission properties from aligned carbon nanotube films with tetrahedral amorphous carbon coatings

机译:具有四面体无定形碳涂层的取向碳纳米管薄膜的场发射特性

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Tetrahedral amorphous carbon (ta-C) film was coated on aligned carbon nanotube (CNT) films via filtered cathodic vacuum arc (FCVA) technique. Field electron emission properties of the CNT films and the ta-C/CNT films were measured in an ultra high vacuum system. The I-V measurements show that, with a thin ta-C film coating, the threshold electric field (E_(thr)) of CNTs can be significantly decreased from 5.74 V/mu m to 2.94 V/mu m, while thick ta-C film coating increased the E_(thr) of CNTs to around 8.20 V/mu m. In addition, the field emission current density of CNT films reached 14.9 mA/cm~2 at 6 V/mu m, while for CNTs film coated with thin ta-C film only 3.1 V/mu m of applied electric field is required to reach equal amount of current density. It is suggested that different field emission mechanisms should be responsible for the distinction in field emission features of CNT films with different thickness of ta-C coating.
机译:通过过滤阴极真空电弧(FCVA)技术将四面体无定形碳(ta-C)膜涂覆在取向碳纳米管(CNT)膜上。在超高真空系统中测量CNT膜和ta-C / CNT膜的场电子发射性质。 IV测量表明,使用ta-C薄膜涂层,CNT的阈值电场(E_(thr))可以从5.74 V /μm显着降低到2.94 V /μm,而ta-C膜厚涂层使CNT的E_(thr)增加到大约8.20 V /μm。此外,CNT膜的场发射电流密度在6 V /μm时达到14.9 mA / cm〜2,而对于涂有ta-C薄膜的CNT膜,仅需要3.1 V /μm的施加电场即可相等的电流密度。建议采用不同的场致发射机制来区别具有不同厚度的ta-C涂层的CNT薄膜的场致发射特性。

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