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首页> 外文期刊>Diamond and Related Materials >Surface tension studies of (Si, N)-containing diamond-like carbon films deposited by hexamethyldisilazane
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Surface tension studies of (Si, N)-containing diamond-like carbon films deposited by hexamethyldisilazane

机译:六甲基二硅氮烷沉积的含(Si,N)的类金刚石碳膜的表面张力研究

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摘要

The (Si, N)-containing diamond-like carbon (DLC) films were deposited using hexamethyldisilazane (HMDSN) reactant in an inductively coupled plasma (ICP) system with the substrate biased by a bipolar-pulsed power supply. Raman spectra of the films were characteristic of a typical DLC film. X-Ray photoelectron spectroscopy (XPS) showed that silicon and nitrogen tended to be bonded to each other. From high-resolution transmission electron microscopy analysis, the diamond-like carbon contains silicon nitride nanoparticles. By measuring the contact angles with the sessile-drop method, the polar and the dispersive components of the surface tension were characterized. The surface tension of the pure DLC (a-C:H) was 26.6 mN/m. By incorporating nitrogen in the DLC film, the surface energy was increased to 33.6 mN/m. The incorporation of nitrogen enhanced the polar share from 8.6 mN/m to 25.6 mN/m, but reduced the dispersive share from 18.1 mN/m to 8.0 mN/m. The polarity of the film was greatly enhanced by the formation of carbon-nitrogen bonds. By further incorporating silicon in the nitrogen doped DLC, the surface tension was reduced back to 24-27 mN/m, close to that of pure DLC films. However, the (Si, N)-containing DLC films had much higher polar shares and lower dispersive shares than those of pure DLC films. Both the effects of the substrate bias and the effects of normal aging on the surface energy of the (Si, N)-containing DLC films were also reported.
机译:使用六甲基二硅氮烷(HMDSN)反应物在感应耦合等离子体(ICP)系统中沉积含(Si,N)的类金刚石碳(DLC)膜,并通过双极性脉冲电源对衬底进行偏置。薄膜的拉曼光谱是典型DLC薄膜的特征。 X射线光电子能谱(XPS)表明,硅和氮趋于彼此键合。通过高分辨率透射电子显微镜分析,类金刚石碳包含氮化硅纳米颗粒。通过无滴法测量接触角,表征了表面张力的极性和分散成分。纯DLC(a-C:H)的表面张力为26.6 mN / m。通过在DLC膜中掺入氮,表面能增加到33.6 mN / m。氮的引入将极性份额从8.6 mN / m增加到25.6 mN / m,但将分散份额从18.1 mN / m减少到8.0 mN / m。碳-氮键的形成大大提高了薄膜的极性。通过在氮掺杂的DLC中进一步掺入硅,表面张力降低到24-27 mN / m,接近纯DLC膜的表面张力。但是,含(Si,N)的DLC膜比纯DLC膜具有更高的极性份额和更低的分散份额。还报道了衬底偏压的影响和正常时效对含(Si,N)的DLC膜的表面能的影响。

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