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Diamond deposition in a DC-arc Jet CVD system: investigations of the effects of nitrogen addition

机译:DC电弧喷射CVD系统中的金刚石沉积:研究氮添加的影响

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摘要

Studies of the chemical vapour deposition of diamond films at growth rates >100#mu#m h~(-1) with a 10-kW DC-arc jet system are described. Additions of small amounts of N_2 to the standard CH_4/H_2/Ar feedstock gas results in strong CN(B-> X) emission, and quenches C_2(d->a) and H_(#alpha#) emissions from the plasma. Species selective, spatially resolved optical emission measurements have enabled derivation of the longitudinal and lateral variation of emitting C_2, CN radicals and H (n=3) atoms within the plasma jet. Scanning electron microscopy and laser Raman analyses indicate that N_2 additions also degrade both the growth rate and quality of the deposited diamond film; the latter technique also provides some evidence for nitrogen inclusion within the films.
机译:描述了用10 kW直流电弧喷射系统对生长速度> 100#μm·mh〜(-1)的金刚石膜进行化学气相沉积的研究。向标准CH_4 / H_2 / Ar原料气中添加少量N_2会导致强烈的CN(B-> X)排放,并淬灭等离子体中的C_2(d-> a)和H _(#alpha#)排放。物种选择性的,空间分辨的光发射测量结果使得能够推导等离子体射流中发射的C_2,CN自由基和H(n = 3)原子的纵向和横向变化。扫描电子显微镜和激光拉曼分析表明,N_2的添加也会降低沉积金刚石膜的生长速度和质量。后一种技术也提供了一些证据,表明薄膜中存在氮。

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