Influence of the annealing process on properties of Cu/BCN/p-Si structure

摘要

Polycrystalline boron carbon nitride (BCN) films are synthesized by plasma-assisted chemical vapor deposition using BCl{sub}3, CH{sub}4 and N{sub}2 as source gases. In order to investigate the influence of the annealing process on properties of Cu/BCN/p-Si samples, capacitance-voltage, current-voltage, X-ray photoelectron spectroscopy and Auger electron spectroscopy measurements are carried out. The dielectric constant of the as-grown BCN film decreases after annealing at 400 ℃ for 15 min. A dielectric constant as low as 2.1 is achieved. Cu diffusion is examined by AES measurements for samples annealed in the temperature range from 350 to 450 ℃. The diffusion depth of Cu is estimated to be from 76 to 88 nm. No variation in the leakage current occurs after annealing at 375 ℃.